发明名称 RESIN HAVING FLUORENE STRUCTURE AND UNDERLAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY
摘要 There are provided a novel resin having a fluorene structure which has a relatively high carbon concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process, and a method for producing the resin, as well as a material for forming an underlayer film useful for forming a novel resist underlayer film excellent in heat resistance and etching resistance as an underlayer film for multilayer resist, and a pattern forming method using the material. The resin of the present invention has a structure represented by the following general formula (1). (in the general formula (1), each of R 3 and R 4 independently denotes a benzene ring or a naphthalene ring, a carbon atom at the bridgehead of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom of each of other aromatic rings, and a carbon atom of each of aromatic rings of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom at the bridgehead of other fluorene backbone or (di)benzofluorene backbone.)
申请公布号 EP2762513(A1) 申请公布日期 2014.08.06
申请号 EP20120835660 申请日期 2012.09.04
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 HIGASHIHARA, GO;UCHIYAMA, NAOYA;ECHIGO, MASATOSHI
分类号 C08G61/02;C08L65/00;G03F7/11;H01L21/027 主分类号 C08G61/02
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