发明名称 |
METHOD FOR DECREASING AN EXCESS CARRIER INDUCED DEGRADATION IN A SILICON SUBSTRATE |
摘要 |
A method (100) for decreasing an excess carrier induced degradation in a silicon substrate, includes providing (120, 130) a charged insulation layer capable of retaining charge on the silicon substrate for generating a potential difference between the charged insulation layer and the silicon substrate, and heat treating (140) the silicon substrate for enabling an impurity causing the excess carrier induced degradation and being in the silicon substrate to diffuse due to the potential difference into a boundary of the silicon substrate and the insulation layer. |
申请公布号 |
EP2761666(A1) |
申请公布日期 |
2014.08.06 |
申请号 |
EP20120836473 |
申请日期 |
2012.10.01 |
申请人 |
AALTO-KORKEAKOULUSÄÄTIÖ |
发明人 |
HAARAHILTUNEN, ANTTI;SAVIN, HELE;YLI-KOSKI, MARKO VELI |
分类号 |
H01L31/028;H01L21/322;H01L31/18 |
主分类号 |
H01L31/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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