发明名称 MAGNETIC TUNNEL JUNCTION DEVICE
摘要 <p>A system and method of manufacturing and using a magnetic tunnel junction device is disclosed. In a particular embodiment, a magnetic tunnel junction device includes a first free layer and second free layer. The magnetic tunnel junction also includes a spin torque enhancement layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers that includes a material and has a thickness that substantially inhibits exchange coupling between the first and second free layers. The first and second free layers are magneto-statically coupled.</p>
申请公布号 EP2510562(B1) 申请公布日期 2014.08.06
申请号 EP20100790821 申请日期 2010.12.08
申请人 QUALCOMM INCORPORATED 发明人 ZHU, XIAOCHUN;KANG, SEUNG H.;LI, XIA;LEE, KANGHO
分类号 H01L43/08;H01L27/22;H01L43/10;H01L43/12 主分类号 H01L43/08
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