发明名称 |
MAGNETIC TUNNEL JUNCTION DEVICE |
摘要 |
<p>A system and method of manufacturing and using a magnetic tunnel junction device is disclosed. In a particular embodiment, a magnetic tunnel junction device includes a first free layer and second free layer. The magnetic tunnel junction also includes a spin torque enhancement layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers that includes a material and has a thickness that substantially inhibits exchange coupling between the first and second free layers. The first and second free layers are magneto-statically coupled.</p> |
申请公布号 |
EP2510562(B1) |
申请公布日期 |
2014.08.06 |
申请号 |
EP20100790821 |
申请日期 |
2010.12.08 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
ZHU, XIAOCHUN;KANG, SEUNG H.;LI, XIA;LEE, KANGHO |
分类号 |
H01L43/08;H01L27/22;H01L43/10;H01L43/12 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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