发明名称 |
Method for producing a perpendicular magnetic recording medium |
摘要 |
To provide a method for manufacturing a perpendicular magnetic recording medium, which is capable of coping with the much higher recording density.;Disclosed is a method for manufacturing a perpendicular magnetic recording medium to be used for recording information by a perpendicular magnetic recording system, including at least a soft magnetic layer, an intermediate layer, and a magnetic recording layer on a substrate, characterized in that the method includes the step of:;composing the intermediate layer of consecutive N layers (provided that N is an integer of at least 3 or more), depositing a first layer containing ruthenium (Ru) as a main component, first; setting a gas pressure during the deposition to the pressure which is higher than or the same as that in the first layer; depositing a second layer containing ruthenium (Ru), or ruthenium (Ru) containing oxygen or an oxide as a main component; and adjusting so that the oxygen content remains constant, or increases toward the uppermost layer in the second layer and succeeding layers. |
申请公布号 |
US8795765(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201013322520 |
申请日期 |
2010.05.22 |
申请人 |
WD Media (Singapore) Pte. Ltd. |
发明人 |
Koike Takashi;Furugori Shigeaki |
分类号 |
G11B5/738;G11B5/73 |
主分类号 |
G11B5/738 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a perpendicular magnetic recording medium to be used for recording information by a perpendicular magnetic recording system, comprising on a substrate and in the order from the bottom, at least a soft magnetic layer, an intermediate layer composed of consecutive N layers, where N is an integer of 3 or more, and a magnetic recording layer, characterized in that the method comprises the steps of:
forming the intermediate layer of consecutive N layers by: first depositing a first layer containing ruthenium (Ru) as a main component at a first gas pressure; depositing on the first layer a second layer containing, as a main component, ruthenium (Ru) containing oxygen or Ru containing an oxide at a second gas pressure that is higher than the first gas pressure; depositing on the second layer a third layer containing, as a main component, ruthenium (Ru) containing oxygen or Ru containing an oxide, wherein the third layer has an oxygen content that is higher than that of the second layer; and when N is an integer more than 3, depositing on the third layer one or more succeeding layers each containing, as a main component, ruthenium (Ru) containing oxygen or Ru containing an oxide, such that the intermediate layer has an increasing oxygen content towards the magnetic recording layer. |
地址 |
Singapore SG |