发明名称 |
LED structure to increase brightness |
摘要 |
A light emitting semiconductor device comprising an LED having an emission aperture located on a surface of the LED and the emission aperture has a size that is smaller than a surface area of the LED where the emission aperture is formed. The device further includes a reflector surrounding both side walls, a bottom surface, and portions of a surface of the LED where the emission aperture is formed or surrounding the bottom surface and portions of the surface of the LED where the emission aperture is formed so that an area on the surface uncovered by the reflector is the emission aperture and is smaller than the area of the LED. Alternatively, in the light emitting semiconductor, the surface of the LED substantially aligned with the emission aperture may be roughened and the surface of the LED beyond the emission aperture may be smooth. The surface of the LED beyond the emission aperture may also be covered by a low loss reflector. |
申请公布号 |
US8796708(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201012892796 |
申请日期 |
2010.09.28 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Shum Frank |
分类号 |
H01S3/08 |
主分类号 |
H01S3/08 |
代理机构 |
Hogan Lovells US LLP |
代理人 |
Hogan Lovells US LLP |
主权项 |
1. A light emitting semiconductor device comprising:
a light emitting diode having two side walls, a bottom surface and a top surface, and having an emission aperture located on the top surface of the light emitting diode; and a reflector formed on the light emitting diode on a portion of the top surface of the light emitting diode surrounding and in direct contact with the two side walls and the bottom surface of the light emitting diode, wherein an area on the top surface of the light emitting diode not covered by the reflector constitutes the emission aperture, wherein the emission aperture has a size that is smaller than a surface area of the to surface of the light emitting diode. |
地址 |
Tokyo JP |