| 摘要 |
A semiconductor device and a method of fabricating the semiconductor device is provided. In the method, a semiconductor substrate defining a device region and an outer region at a periphery of the device region is provided, an align trench is formed in the outer region, a dummy trench is formed in the device region, an epi layer is formed over a top surface of the semiconductor substrate and within the dummy trench, a current path changing part is formed over the epi layer, and a gate electrode is formed over the current path changing part. When the epi layer is formed, a current path changing trench corresponding to the dummy trench is formed over the epi layer, and the current path changing part is formed within the current path changing trench. |
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
providing a semiconductor substrate with a defined device region and a defined outer region, wherein the outer region is at a periphery of the device region; forming a first align trench in the outer region; forming a dummy trench in the device region; forming an epitaxial layer over a top surface of the semiconductor substrate and within the dummy trench; forming a current path changing portion over the epitaxial layer; and forming a gate electrode over the current path changing portion, wherein when the epitaxial layer is formed, a current path changing trench corresponding to the dummy trench is formed on the epitaxial layer, and the current path changing portion is formed within the current path changing trench. |
