发明名称 |
METHOD OF MAKING A DIE WITH RECESSED ALUMINUM DIE PADS |
摘要 |
A method for making a semiconductor device comprises forming an electrical interconnect layer, forming a first dielectric layer over the interconnect layer, forming an opening in the first dielectric layer over a first electrical interconnect of the interconnect layer, forming an aluminum layer over the first dielectric layer, etching the aluminum layer to form an aluminum die pad, forming a second dielectric layer over the aluminum die pad and the first dielectric layer, and forming a conductive via through the first and second dielectric layers to contact a second electrical interconnect of the interconnect layer. |
申请公布号 |
US2014213050(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201414230875 |
申请日期 |
2014.03.31 |
申请人 |
SPENCER GREGORY S.;Crabtree Philip E.;Denning Dean J.;Junker Kurt H.;Martin Gerald A. |
发明人 |
SPENCER GREGORY S.;Crabtree Philip E.;Denning Dean J.;Junker Kurt H.;Martin Gerald A. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method for making a semiconductor device comprising:
forming an electrical interconnect layer; forming a first dielectric layer over the electrical interconnect layer; forming an opening in the first dielectric layer over a first interconnect of the electrical interconnect layer; forming an aluminum layer over the opening and the first dielectric layer; patterning the aluminum layer to form an aluminum die pad electrically coupled to the first interconnect of the electrical interconnect layer; forming a second dielectric layer with a planar surface over the aluminum die pad and the first dielectric layer; forming a conductive via through the first dielectric layer and the second dielectric layer to electrically contact a second interconnect of the electrical interconnect layer. |
地址 |
Hutto TX US |