Interconnect structures and design structures for a radiofrequency integrated circuit

摘要

Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, such as a radiofrequency integrated circuit. A top surface of a dielectric layer is recessed relative to a top surface of a conductive feature in the dielectric layer. The passive element is formed on the recessed top surface of the dielectric layer and includes a layer of a conductive material that is coplanar with, or below, the top surface of the conductive feature.

主权项

1. A back-end-of-line (BEOL) interconnect structure comprising:
a first metallization level including a first dielectric layer with a top surface and a first conductive feature in the dielectric layer, the first conductive feature having a top surface that projects above at least a portion of the top surface of the first dielectric layer; a passive element on the top surface of the first dielectric layer, the passive element including a layer of a conductive material having a top surface that is approximately coplanar with the top surface of the first conductive feature or below the top surface of the first conductive feature; and a second metallization level including a second conductive feature having a bottom surface coupled with the top surface of the layer of the passive element, the bottom surface of the second conductive feature positioned above the top surface of the first conductive feature.