发明名称 |
Power transistor with heat dissipation and method therefor |
摘要 |
A device comprising a substrate, an integrated circuit (IC) die attached to the substrate on one side, a plurality of contact pads on an active side of the IC die, a plurality of thermally and electrically conductive legs, each of the legs attached to a respective one of the contact pads, and an encapsulating material formed around the substrate, the IC die, and a portion of the legs. A contact end of each of the legs is exposed, and one of the contact ends conducts a signal from a transistor in the IC die. |
申请公布号 |
US8790964(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201213538585 |
申请日期 |
2012.06.29 |
申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Ding Min |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
Clingan, Jr. James L.;Bertani Mary Jo |
主权项 |
1. A method comprising:
attaching a power die to a leadframe; attaching a heat spreader to an active surface of the power die, wherein
the heat spreader is thermally and electrically conductive;the active surface includes bond pads that are electrically conductive; andthe heat spreader includes a flat surface and a plurality of legs attached to one side of the flat surface, each of the legs are attached to a corresponding one of the bond pads; molding an encapsulating material to surround the power die, the leadframe, and the legs of the heat spreader, wherein a top side of the flat surface is exposed through the encapsulating material; and cutting through the flat surface between the legs to form external contacts that are electrically independent of one another. |
地址 |
Austin TX US |