Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device is disclosed. In the method for manufacturing the semiconductor device, a capacitor structure is modified to ensure capacitance of the capacitor, and the height of the capacitor is reduced to prevent defects such as a leaning capacitor or a poor bridge from being generated, such that the fabrication process of semiconductor devices is simplified and therefore the semiconductor devices can be stably manufactured.

主权项

1. A semiconductor device comprising:
a first storage node contact plug disposed in a contact hole over a semiconductor substrate; a second pad type storage node contact plug formed over the first storage node contact plug; a third bar type storage node contact plug formed over the second storage node contact plug; and a bar type lower electrode formed over the third storage node contact plug, wherein a group of from three to seven second storage node contact plugs are disposed under the lower electrode.