Semiconductor device and its manufacture method

摘要

A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

主权项

1. A semiconductor device comprising:
a support substrate comprising a first surface and a second surface that is located on a same side of the first surface and above a level of the first surface; chips mounted over the first surface, the chips being surrounded by the second surface; first insulating films, each of which is disposed over each of the chips; first conductive plugs formed through each of the first insulating films and connected to each of the chips; filler material made of resin and filling a space between the chips; and wirings disposed over the first insulating films and the filler material, wherein the second surface, upper surfaces of the first insulating films, and an upper surface of the filler material are located at a same level; wherein the first surface comprises at least one enclosed area, and each enclosed area is the smallest area respectively surrounded by a respective portion of the second surface; and wherein more than one of the chips are disposed in the enclosed area.