Method of forming semiconductor device having self-aligned plug

摘要

A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a conductive pattern on a substrate; forming a first insulating pattern having a first trench on the conductive pattern; forming a first spacer on a sidewall of the first trench; forming a second trench exposing the conductive pattern below the first trench using the first spacer as an etch mask; forming a bottom electrode on sidewalls of the first spacer and the second trench; forming a second insulating pattern filling the first trench and the second trench; recessing the first spacer, recessing the bottom electrode, and forming an opening between the first insulating pattern and the second insulating pattern; and forming a data storage plug filling the opening.