发明名称 |
Method for making light emitting diode |
摘要 |
A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer. |
申请公布号 |
US8790940(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201213479232 |
申请日期 |
2012.05.23 |
申请人 |
Tsinghua University;Hon Hai Precision Industry Co., Ltd. |
发明人 |
Zhu Zhen-Dong;Li Qun-Qing;Zhang Li-Hui;Chen Mo;Fan Shou-Shan |
分类号 |
H01L21/00;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP |
主权项 |
1. A method for making a light emitting diode, comprising:
providing a substrate have an epitaxial growth surface; growing a first semiconductor layer on the epitaxial growth surface of the substrate; locating a patterned mask layer on a surface of the first semiconductor layer, wherein the patterned mask layer comprises a plurality of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures of the plurality of bar-shaped protruding structures to expose a portion of the first semiconductor layer; etching the exposed first semiconductor layer, wherein the each two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair; forming a plurality of three-dimensional nano-structures by removing the patterned mask layer; growing an active layer on a surface of the plurality of three-dimensional nano-structures; growing a second semiconductor layer on the active layer; exposing a surface of the first semiconductor layer by removing the substrate; applying a first electrode covering and electrically connecting with the entire surface of the first semiconductor layer away from the active layer; and locating a second electrode to electrically connect with the second semiconductor layer. |
地址 |
Beijing CN |