发明名称 |
BIPOLAR/DUAL FET STRUCTURE INCLUDING ENHANCEMENT AND DEPLETION MODE FETS WITH ISOLATED CHANNELS FET / FET |
摘要 |
Bipolar field effect transistor (BiFET) structures and methods of forming the same are provided. In one embodiment, an apparatus includes a substrate and a plurality of epitaxial layers disposed over the substrate. The plurality of epitaxial layers includes a first epitaxial layer, a second epitaxial layer disposed over the first epitaxial layer, and a third epitaxial layer disposed over the second epitaxial layer. The first epitaxial layer includes at least a portion of a channel of a first field effect transistor (FET) and the third epitaxial layer includes at least a portion of a channel of a second FET. |
申请公布号 |
HK1163934(A1) |
申请公布日期 |
2014.07.25 |
申请号 |
HK20120104223 |
申请日期 |
2012.04.30 |
申请人 |
SKYWORKS SOLUTIONS INC. |
发明人 |
ZAMPARDI, PETER, J.;SUN, MIKE |
分类号 |
H01L |
主分类号 |
H01L |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|