EUV Mask and Method for Forming the Same

摘要

An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.

主权项

1. A mask comprising:
a reflective multilayer over a substrate; an absorption layer disposed over the reflective multilayer; and an antireflection layer disposed over the absorption layer, wherein a trench extends through the antireflection layer and terminates in the absorption layer.