RACETRACK MEMORY CELLS WITH A VERTICAL NANOWIRE STORAGE ELEMENT

摘要

A racetrack memory cell device include a dielectric, an electrode disposed in the dielectric, a metal strap disposed in the dielectric, a nanowire disposed in the dielectric between the electrode and the metal strap and a magnetic tunnel junction disposed in the dielectric on the metal strap, and axially with the nanowire.

主权项

1. A method of operating a racetrack memory cell device the method comprising:
writing and shifting a domain wall in a nanowire; reading a domain magnetization from the nanowire; and shifting the domain wall in the nanowire.