| 发明名称 |
BORON-DOPED ZINC OXIDE SPUTTERING TARGET AND ITS APPLICATION |
| 摘要 |
A boron-doped zinc oxide sputtering target, BZO sputtering target, is provided to deposit a BZO film by direct current sputtering. The BZO sputtering target has an amount of B/(B+Zn) ranging from 1.15 atomic % to 6.74 atomic % and a second phase ranging from 2% to 25% relative to a total area of the matrix phase and the second phase. Accordingly, a BZO film having a transmittance higher than 80% within a wavelength from 400 nanometers to 1100 nanometers and a resistivity less than 1×10−2 Ω-cm can be prepared by DC sputtering the BZO sputtering target. |
| 申请公布号 |
US2014202851(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201313746410 |
申请日期 |
2013.01.22 |
| 申请人 |
CORP. SOLAR APPLIED MATERIALS TECHNOLOGY |
发明人 |
LIU Yen-Ming;CHANG Chih-Yung;SHIU Hui-Ying |
| 分类号 |
C23C14/08 |
主分类号 |
C23C14/08 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A boron-doped zinc oxide sputtering target, which has an amount of B/(B+Zn) ranging from 1.15 atomic % to 6.74 atomic %, wherein the boron-doped zinc oxide sputtering target is composed of a matrix phase and a second phase; and a percentage of an area of the second phase relative to a total area of the matrix phase and the second phase ranges from 2% to 25%. |
| 地址 |
US |
