| 发明名称 |
SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF |
| 摘要 |
A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and spaced from one another along a first lateral dimension, and a drift region in the semiconductor substrate and through which charge carriers drift during operation upon application of a bias voltage between the source and drain regions. The drift region has a notched dopant profile in a second lateral dimension along an interface between the drift region and the drain region. |
| 申请公布号 |
US2014203358(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201313748076 |
申请日期 |
2013.01.23 |
| 申请人 |
Yang Hongning;Lin Xin;Zhang Zhihong;Zuo Jiang-Kai |
发明人 |
Yang Hongning;Lin Xin;Zhang Zhihong;Zuo Jiang-Kai |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A device comprising:
a semiconductor substrate; source and drain regions in the semiconductor substrate and spaced from one another along a first lateral dimension; and a drift region in the semiconductor substrate and through which charge carriers drift during operation upon application of a bias voltage between the source and drain regions; wherein the drift region has a notched dopant profile in a second lateral dimension along an interface between the drift region and the drain region. |
| 地址 |
Chandler AZ US |
