发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus of which the fluctuation in the plasma processing performance caused by physical fluctuation of a plasma processing chamber can be suppressed.SOLUTION: The plasma processing apparatus includes: a plasma processing chamber for processing a sample by plasma; a first high-frequency power source supplying a high-frequency power for generating plasma in the plasma processing chamber; a sample table for placing the sample; a second high-frequency power source supplying a high-frequency power to the sample table; detection means detecting a voltage and a current applied to the sample table; and a control device controlling the first and second high-frequency power supplies by using an output value from the detection means. The control device controls the first high-frequency power source by using data of a current waveform detected by the detection means, and controls the second high-frequency power source by using data of a voltage waveform detected by the detection means.
申请公布号 JP2014135305(A) 申请公布日期 2014.07.24
申请号 JP20130000778 申请日期 2013.01.08
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TANAKA MOTOHIRO;SUMIYA MASAHIRO
分类号 H01L21/3065;H05H1/00;H05H1/46 主分类号 H01L21/3065
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