发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus of which the fluctuation in the plasma processing performance caused by physical fluctuation of a plasma processing chamber can be suppressed.SOLUTION: The plasma processing apparatus includes: a plasma processing chamber for processing a sample by plasma; a first high-frequency power source supplying a high-frequency power for generating plasma in the plasma processing chamber; a sample table for placing the sample; a second high-frequency power source supplying a high-frequency power to the sample table; detection means detecting a voltage and a current applied to the sample table; and a control device controlling the first and second high-frequency power supplies by using an output value from the detection means. The control device controls the first high-frequency power source by using data of a current waveform detected by the detection means, and controls the second high-frequency power source by using data of a voltage waveform detected by the detection means. |
申请公布号 |
JP2014135305(A) |
申请公布日期 |
2014.07.24 |
申请号 |
JP20130000778 |
申请日期 |
2013.01.08 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
TANAKA MOTOHIRO;SUMIYA MASAHIRO |
分类号 |
H01L21/3065;H05H1/00;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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