主权项 |
1. A plasma processing apparatus comprising:
a processing container; a mounting table provided within the processing container and including a lower electrode; a shower head provided above the mounting table and constituting an upper electrode; and a gas inlet tube provided above the shower head and connected to the shower head, wherein the shower head is formed with a plurality of gas ejection holes which are opened downwardly, and provided with a first gas diffusion chamber and a second gas diffusion chamber on the plurality of gas ejection holes, the first gas diffusion chamber and the second gas diffusion chamber being separated from each other, the first gas diffusion chamber extends along a central axis that passes through a center of the mounting table, the second gas diffusion chamber extends in a circumferential direction with respect to the central axis at least around the first gas diffusion chamber, and the gas inlet tube includes a cylindrical first tube wall provided along the central axis and a cylindrical second tube wall provided outside the first tube wall, the gas inlet tube defining a first gas inlet path configured to introduce a gas into the first gas diffusion chamber, inside the first tube wall, and a second gas inlet path configured to introduce a gas into the second gas diffusion chamber, between the first tube wall and the second tube wall. |