发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In the semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and an aluminum film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in such a manner that oxygen is introduced to the insulating layer and the aluminum film from a position above the aluminum film, whereby a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the aluminum film is oxidized to form an aluminum oxide film. |
申请公布号 |
US8785258(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201213711022 |
申请日期 |
2012.12.11 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei |
分类号 |
H01L21/00;H01L21/84;H01L21/44 |
主分类号 |
H01L21/00 |
代理机构 |
Robinson Intellectual Property Law Office, P.C. |
代理人 |
Robinson Eric J.;Robinson Intellectual Property Law Office, P.C. |
主权项 |
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer: forming an insulating layer over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer; forming an aluminum film in contact with the insulating layer; and performing an oxygen doping treatment on the insulating layer and the aluminum film, so that at least a portion of the aluminum film is oxidized to be an aluminum oxide film. |
地址 |
Atsugi-shi, Kanagawa-ken JP |