发明名称 Three dimensional microelectronic components and fabrication methods for same
摘要 Aspects and examples include electrical components and methods of forming electrical components. In one example, a method includes selecting a substrate, forming a pattern of a first conductive material on a top surface of the substrate, forming a pattern of a second conductive material on a bottom surface of the substrate, dicing the substrate into one or more die having a first diced surface and a second diced surface, securing the first diced surface of each of the one or more die to a retaining material, encapsulating the one or more die in an encapsulent to form a reconstituted wafer, and forming a pattern of a third conductive material on the second diced surface by metalizing a surface of the reconstituted wafer.
申请公布号 US8785249(B2) 申请公布日期 2014.07.22
申请号 US201213488804 申请日期 2012.06.05
申请人 The Charles Stark Draper Laboratory, Inc. 发明人 Karpman Maurice
分类号 H01L21/00;H01L21/78;H01L21/56 主分类号 H01L21/00
代理机构 Lando & Anastasi, LLP 代理人 Lando & Anastasi, LLP
主权项 1. A method of forming an electrical component, the method comprising: selecting a substrate; forming a pattern of a first conductive material on a top surface of the substrate; forming a pattern of a second conductive material on one of a bottom surface of the substrate and a dielectric layer formed over the pattern of the first conductive material; dicing the substrate into a plurality of dies each having a first diced surface and a second diced surface, the first diced surface and the second diced surface formed by the dicing of the substrate; securing the first diced surface of each of the plurality of dies to a retaining material; encapsulating the plurality of dies in an encapsulent to form a reconstituted wafer; and forming a pattern of a third conductive material on the second diced surfaces by metalizing a surface of the reconstituted wafer.
地址 Cambridge MA US