发明名称 |
Three dimensional microelectronic components and fabrication methods for same |
摘要 |
Aspects and examples include electrical components and methods of forming electrical components. In one example, a method includes selecting a substrate, forming a pattern of a first conductive material on a top surface of the substrate, forming a pattern of a second conductive material on a bottom surface of the substrate, dicing the substrate into one or more die having a first diced surface and a second diced surface, securing the first diced surface of each of the one or more die to a retaining material, encapsulating the one or more die in an encapsulent to form a reconstituted wafer, and forming a pattern of a third conductive material on the second diced surface by metalizing a surface of the reconstituted wafer. |
申请公布号 |
US8785249(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201213488804 |
申请日期 |
2012.06.05 |
申请人 |
The Charles Stark Draper Laboratory, Inc. |
发明人 |
Karpman Maurice |
分类号 |
H01L21/00;H01L21/78;H01L21/56 |
主分类号 |
H01L21/00 |
代理机构 |
Lando & Anastasi, LLP |
代理人 |
Lando & Anastasi, LLP |
主权项 |
1. A method of forming an electrical component, the method comprising:
selecting a substrate; forming a pattern of a first conductive material on a top surface of the substrate; forming a pattern of a second conductive material on one of a bottom surface of the substrate and a dielectric layer formed over the pattern of the first conductive material; dicing the substrate into a plurality of dies each having a first diced surface and a second diced surface, the first diced surface and the second diced surface formed by the dicing of the substrate; securing the first diced surface of each of the plurality of dies to a retaining material; encapsulating the plurality of dies in an encapsulent to form a reconstituted wafer; and forming a pattern of a third conductive material on the second diced surfaces by metalizing a surface of the reconstituted wafer. |
地址 |
Cambridge MA US |