Photoelectric conversion device and energy conversion layer for photoelectric conversion device

摘要

A novel photoelectric conversion device in which energy of light can be effectively utilized and performance can be improved is provided. A photoelectric conversion device includes a photoelectric conversion element and an energy conversion layer provided on a light-receiving side of a photoelectric conversion layer included in the photoelectric conversion element. The energy conversion layer includes a plurality of first layers and a plurality of second layers. The first layer and the second layer are alternately stacked. The thickness of the first layer is greater than or equal to 0.5 nm and less than or equal to 10 nm, and the thickness of the second layer is greater than or equal to 0.5 nm and less than or equal to 10 nm. The second layer can be formed using a material having a larger energy band gap than that of a material used for the first layer.

主权项

1. A photoelectric conversion device comprising:
a photoelectric conversion element comprising:
a first electrode;a first semiconductor layer over the first electrode;a photoelectric conversion layer over the first electrode;a second semiconductor layer over the photoelectric conversion layer; anda second electrode over and in contact with the second semiconductor layer; and an energy conversion layer over the photoelectric conversion element, wherein the energy conversion layer comprises a plurality of first layers and a plurality of second layers alternately stacked, and wherein the second electrode passes through the energy conversion layer.