NONVOLITILE MEMORY DEVICE AND READ METHOD THEREOF

摘要

The present invention relates to a nonvolatile memory device and a read method thereof, more specifically, to a resistance memory device including a resistance material and a read method thereof. The nonvolatile memory device according to the present invention includes a main area including main cells connected to word lines and main bit lines and reference cells which connect the word lines to the reference bit lines. A reference area programmed with the same read condition as the main area includes a reference sensing amplification circuit for reading data written on the reference area through the reference bit lines in the read operation and a control logic which controls the reference sensing amplification circuit to read the data written in the reference area by shifting the data with the predetermined-weighted value to use data written in the reference area as the read reference value of the main area in the read operation. The resistance memory device and a read method thereof according to the present invention guarantees resistance drift without increasing control complexity.