发明名称 |
THIN FILM TRANSISTOR DISPLAY PLATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor display plate that maintains a parasitic capacitance evenly between a gate electrode and a drain electrode to prevent image quality deterioration due to the difference of the parasitic capacitance.SOLUTION: A thin transistor display plate forms a first gate electrode 121 and a second drain electrode 175b. A first drain electrode 175a and the second drain electrode 175b are formed based on a constant width along a direction in which a gate line 121 extends so that area changes become same. Also, the first drain electrode 175a and a second gate electrode 125 are formed based on a constant width along the direction in which the gate line 121 extends so that area changes become same. |
申请公布号 |
JP2014132337(A) |
申请公布日期 |
2014.07.17 |
申请号 |
JP20130267270 |
申请日期 |
2013.12.25 |
申请人 |
SAMSUNG DISPLAY CO LTD |
发明人 |
HWANG JUNG HWAN;KOO BON-YONG;PARK SOO JIN;PARK JONG-MOON;LEE YONG-HEE;YI JONG-HYUCK;CHO DEOK-HAN |
分类号 |
G02F1/1368;G09F9/30;H01L21/336;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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