发明名称 THIN FILM TRANSISTOR DISPLAY PLATE
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor display plate that maintains a parasitic capacitance evenly between a gate electrode and a drain electrode to prevent image quality deterioration due to the difference of the parasitic capacitance.SOLUTION: A thin transistor display plate forms a first gate electrode 121 and a second drain electrode 175b. A first drain electrode 175a and the second drain electrode 175b are formed based on a constant width along a direction in which a gate line 121 extends so that area changes become same. Also, the first drain electrode 175a and a second gate electrode 125 are formed based on a constant width along the direction in which the gate line 121 extends so that area changes become same.
申请公布号 JP2014132337(A) 申请公布日期 2014.07.17
申请号 JP20130267270 申请日期 2013.12.25
申请人 SAMSUNG DISPLAY CO LTD 发明人 HWANG JUNG HWAN;KOO BON-YONG;PARK SOO JIN;PARK JONG-MOON;LEE YONG-HEE;YI JONG-HYUCK;CHO DEOK-HAN
分类号 G02F1/1368;G09F9/30;H01L21/336;H01L29/786 主分类号 G02F1/1368
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