ELECTRON BEAM PLASMA CHAMBER

摘要

A method and apparatus for tailoring the formation of active species using one or more electron beams to improve gap-fill during an integrated circuit formation process is disclosed herein. The energy of the electron beams may be decreased to maximize electrons leading to radicals or increased to maximize electrons leading to ions, depending on the fill application. An apparatus comprising multiple impinging jets of gas perpendicular to one or more electron beams is also disclosed.

主权项

1. A method of controlling an active species of one or more electron beams, said method comprising:
positioning a substrate in a processing chamber, the substrate comprising:
one or more horizontal surface; andone or more features comprising side walls; flowing one or more source gases into the processing chamber, wherein the source gases have an ionization peak and a dissociation peak; and impinging the one or more source gases with one or more electron beams at an energy level between the ionization peak and the dissociation peak, to deposit a layer on both the side walls and the horizontal surfaces.