SEMICONDUCTOR DEVICE WITH CHIP HAVING LOW-K-LAYERS

摘要

A semiconductor device is described having at least one semiconductor chip, the chip having an active area on a top side thereof, the active area formed at least in part of low-k material, said low-k material defining a low-k subarea of said active area; an embedding material, in which said at least one semiconductor chip is embedded, at least part of the embedding material forming a coplanar area with said active area; at least one contact area within the low-k subarea; a redistribution layer on the coplanar area, the redistribution layer connected to said contact areas; at least one first-level interconnect, located outside said low-k subarea, the first-level interconnect electrically connected to at least one of said contact areas via the redistribution layer.

主权项

1. A semiconductor device comprising:
at least one semiconductor chip, the chip comprising: an active area on a top side of the at least one semiconductor chip, the active area being formed at least in part of a low-k material defining a low-k sub-area of the active area; an embedding material embedding the at least one semiconductor chip, wherein at least part of the embedding material forms a coplanar area with the active area; at least one contact area disposed within the low-k sub-area; and at least one interconnect, located outside the low-k sub-area, the interconnect electrically connected to the at least one contact area.