| 摘要 |
A method for forming a semiconductor structure comprising a gate electrode, which protrudes from a semiconductor substrate in which ion implantation is performed, and a polycrystalline silicon layer on the semiconductor substrate. A method for implanting ions comprises a step for implanting ions for a polycrystalline silicon layer; a step for processing a pre-annealing process in order that the implanted ions are concentrated to the polycrystalline silicon layer at the boundary of the polycrystalline silicon layer and the semiconductor substrate; and a step for processing an annealing process in order that the concentrated ions are spread over the semiconductor substrate. The temperature of the pre-annealing process is lower than the temperature of the annealing process. The pre-annealing process spreads the ions on the boundary of the polycrystalline silicon layer and the semiconductor substrate to locate the implanted ions on the same plane, and a high-temperature annealing process is further performed to spread the ions over the semiconductor substrate and secure the uniformity of ion spreading, thereby forming a doping area in which a boundary is arranged. |
