Method for forming seed layer structure

摘要

A seed layer comprises a bottom seed layer portion formed on the bottom of a via opening, a sidewall seed layer portion formed on an upper portion of the sidewall of the via opening and a corner seed layer portion formed between the bottom seed layer portion and the sidewall seed layer portion. The sidewall seed layer portion is of a first thickness. The corner seed layer portion is of a second thickness and the second thickness is greater than the first thickness.

主权项

1. A method comprising:
depositing a dielectric layer over a substrate; forming a dual damascene opening in the dielectric layer, wherein the dual damascene opening comprises:
a via opening; anda trench opening; depositing a seed layer over a surface of the dual damascene opening; applying a re-sputtering process to a bottom portion of the seed layer, wherein ions of the bottom portion of the seed layer are splashed toward a sidewall portion of the seed layer, and wherein a lower portion of the sidewall portion is thicker than the bottom portion; and performing a deposition process on the bottom portion of the seed layer.