发明名称 |
Method and apparatus providing integrated circuit having redistribution layer with recessed connectors |
摘要 |
A method of making a semiconductor die includes forming a trench around a conductive stud extending from the first side to a second side of a substrate to expose a portion of the stud and then forming a conductive layer inside the trench and in electrical contact with the stud. |
申请公布号 |
US8779605(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US201213605621 |
申请日期 |
2012.09.06 |
申请人 |
Micron Technology, Inc. |
发明人 |
Pratt David |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
Dickstein Shapiro LLP |
代理人 |
Dickstein Shapiro LLP |
主权项 |
1. An electronic device comprising:
a semiconductor die comprising: a substrate; integrated circuitry arranged in a first surface of the substrate; a trench arranged in a second surface of the substrate; a first dielectric layer arranged within the trench; a conductive redistribution layer wholly contained within the trench and on the first dielectric layer, the conductive redistribution layer being electrically coupled to the integrated circuitry; and a conductive stud electrically coupling the integrated circuitry to the conductive redistribution layer; wherein the conductive redistribution layer comprises a first bond pad, a second bond pad and a conductive trace electrically coupling the second bond pad to the first bond pad. |
地址 |
Boise ID US |