发明名称 Method and apparatus providing integrated circuit having redistribution layer with recessed connectors
摘要 A method of making a semiconductor die includes forming a trench around a conductive stud extending from the first side to a second side of a substrate to expose a portion of the stud and then forming a conductive layer inside the trench and in electrical contact with the stud.
申请公布号 US8779605(B2) 申请公布日期 2014.07.15
申请号 US201213605621 申请日期 2012.09.06
申请人 Micron Technology, Inc. 发明人 Pratt David
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
代理机构 Dickstein Shapiro LLP 代理人 Dickstein Shapiro LLP
主权项 1. An electronic device comprising: a semiconductor die comprising: a substrate; integrated circuitry arranged in a first surface of the substrate; a trench arranged in a second surface of the substrate; a first dielectric layer arranged within the trench; a conductive redistribution layer wholly contained within the trench and on the first dielectric layer, the conductive redistribution layer being electrically coupled to the integrated circuitry; and a conductive stud electrically coupling the integrated circuitry to the conductive redistribution layer; wherein the conductive redistribution layer comprises a first bond pad, a second bond pad and a conductive trace electrically coupling the second bond pad to the first bond pad.
地址 Boise ID US