Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods

摘要

Embodiments of the present invention include methods of directly bonding together semiconductor structures. In some embodiments, a cap layer may be provided at an interface between directly bonded metal features of the semiconductor structures. In some embodiments, impurities are provided within the directly bonded metal features of the semiconductor structures. Bonded semiconductor structures are formed using such methods.

主权项

1. A method of directly bonding a first semiconductor structure to a second semiconductor structure, comprising:
forming a cap layer comprising a metal and silicon at a surface of a first metal feature on the first semiconductor structure, a surface of the cap layer defining a first bonding surface of the first metal feature; and directly bonding a second bonding surface of a second metal feature on the second semiconductor structure to the first bonding surface of the first metal feature on the first semiconductor structure.