发明名称 |
Plasmon absorption modulator systems and methods |
摘要 |
Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers. |
申请公布号 |
US8780431(B1) |
申请公布日期 |
2014.07.15 |
申请号 |
US201213364832 |
申请日期 |
2012.02.02 |
申请人 |
Sandia Corporation |
发明人 |
Kekatpure Rohan Deodatta;Davids Paul |
分类号 |
G02F1/01;G02B5/00 |
主分类号 |
G02F1/01 |
代理机构 |
|
代理人 |
Finston Martin I. |
主权项 |
1. A plasmon absorption modulator system comprising:
a semiconductor substrate having a top surface; a variable absorption layer; a metal layer having a length parallel to the top surface of the semiconductor substrate and configured to enable propagation of plasmons along its length; and a coupling structure configured to receive electromagnetic radiation and in response to such received radiation to generate a plasmonic current in the metal layer, and/or to receive plasmonic current from the metal layer and in response to such received current to generate and transmit electromagnetic radiation; wherein the variable absorption layer comprises a plurality of quantum well layers stacked on a top surface of the semiconductor substrate; wherein the metal layer is formed on a top surface of the stack of quantum well layers; and wherein the variable absorption layer is configured to attenuate plasmons of at least some frequencies propagating along the metal layer by an amount that depends on a voltage applied across the stack of quantum well layers. |
地址 |
Albuquerque NM US |