发明名称 Plasmon absorption modulator systems and methods
摘要 Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.
申请公布号 US8780431(B1) 申请公布日期 2014.07.15
申请号 US201213364832 申请日期 2012.02.02
申请人 Sandia Corporation 发明人 Kekatpure Rohan Deodatta;Davids Paul
分类号 G02F1/01;G02B5/00 主分类号 G02F1/01
代理机构 代理人 Finston Martin I.
主权项 1. A plasmon absorption modulator system comprising: a semiconductor substrate having a top surface; a variable absorption layer; a metal layer having a length parallel to the top surface of the semiconductor substrate and configured to enable propagation of plasmons along its length; and a coupling structure configured to receive electromagnetic radiation and in response to such received radiation to generate a plasmonic current in the metal layer, and/or to receive plasmonic current from the metal layer and in response to such received current to generate and transmit electromagnetic radiation; wherein the variable absorption layer comprises a plurality of quantum well layers stacked on a top surface of the semiconductor substrate; wherein the metal layer is formed on a top surface of the stack of quantum well layers; and wherein the variable absorption layer is configured to attenuate plasmons of at least some frequencies propagating along the metal layer by an amount that depends on a voltage applied across the stack of quantum well layers.
地址 Albuquerque NM US