Capping coating for 3D integration applications

摘要

A structure for a semiconductor component is provided having a bi-layer capping coating integrated and built on supporting layer to be transferred. The bi-layer capping protects the layer to be transferred from possible degradation resulting from the attachment and removal processes of the carrier assembly used for layer transfer. A wafer-level layer transfer process using this structure is enabled to create three-dimensional integrated circuits.

主权项

1. A method of constructing a structure for interconnecting semiconductor components, comprising:
providing a substrate including a metallic element to be transferred; forming a bi-layer capping coating comprised of an amino silane layer and a nitride-containing layer on the substrate, each of the amino silane layer and the nitride-containing layer of said capping coating providing protection and adhesion, wherein the amino silane layer is composed of an amino silane compound represented by the formula: wherein:each of R1, R2,R3,is independently hydrogen, C1-C6alkyl, C1-C6acyl, C2-C6allyl, C2-C6alkenyl,or C2-C6alkynyl,R4is C1-C6alkyl, phenyl,or benzyl,andeach of R5and R6is independently C1-C6alkyl, C1-C6acyl, C2-C6allyl, C2-C6alkenyl, or C2-C6alkynyl; and forming a carrier assembly on the bi-layer capping coating, wherein the nitride-containing layer protects the metallic element from oxidation during a removal process used to remove the carrier assembly in transferring the substrate including the metallic element.