发明名称 METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE
摘要 A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter. The metal hard mask is patterned by the photo resist and the photo mask is then stripped and the top electrode (overlying magnetic materials of the magnetoresistive-based device) is patterned by the metal hard mask.
申请公布号 US2014190933(A1) 申请公布日期 2014.07.10
申请号 US201313826658 申请日期 2013.03.14
申请人 Everspin Technologies, Inc. 发明人 Deshpande Sarin;Aggarwal Sanjeev;Nagel Kerry
分类号 G11B5/127 主分类号 G11B5/127
代理机构 代理人
主权项 1. A method of manufacturing a magnetoresistive-based device, comprising: providing a magnetic material layer; depositing a metal layer over the magnetic material layer; depositing a patterned photo resist over the metal layer; etching the metal layer not covered by the patterned photo resist to form an electrically conductive electrode; removing the patterned photo resist; and etching the magnetic material layer not covered by the electrically conductive electrode to form a magnetic material stack.
地址 US