发明名称 |
METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE |
摘要 |
A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter. The metal hard mask is patterned by the photo resist and the photo mask is then stripped and the top electrode (overlying magnetic materials of the magnetoresistive-based device) is patterned by the metal hard mask. |
申请公布号 |
US2014190933(A1) |
申请公布日期 |
2014.07.10 |
申请号 |
US201313826658 |
申请日期 |
2013.03.14 |
申请人 |
Everspin Technologies, Inc. |
发明人 |
Deshpande Sarin;Aggarwal Sanjeev;Nagel Kerry |
分类号 |
G11B5/127 |
主分类号 |
G11B5/127 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a magnetoresistive-based device, comprising:
providing a magnetic material layer; depositing a metal layer over the magnetic material layer; depositing a patterned photo resist over the metal layer; etching the metal layer not covered by the patterned photo resist to form an electrically conductive electrode; removing the patterned photo resist; and etching the magnetic material layer not covered by the electrically conductive electrode to form a magnetic material stack. |
地址 |
US |