| 发明名称 | Ion implantation method and ion implantation apparatus | ||
| 摘要 | An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts. | ||
| 申请公布号 | US8772142(B2) | 申请公布日期 | 2014.07.08 |
| 申请号 | US201213426423 | 申请日期 | 2012.03.21 |
| 申请人 | SEN Corporation | 发明人 | Ninomiya Shiro;Kudo Tetsuya;Ochi Akihiro |
| 分类号 | H01L21/425 | 主分类号 | H01L21/425 |
| 代理机构 | Arent Fox LLP | 代理人 | Arent Fox LLP |
| 主权项 | 1. An ion implantation method comprising: reciprocally scanning an ion beam; mechanically scanning a wafer in a direction perpendicular to an ion beam scanning direction; implanting ions into the wafer; and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by performing speed control of a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in a mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts. | ||
| 地址 | Tokyo JP | ||