发明名称 Magnetoresistive-based mixed anisotropy high field sensor
摘要 A mixed anisotropy magnetic field sensor includes a first magnetic material film having in-plane anisotropy with a first magnetic easy axis that is in-plane, a second magnetic material film having out-of-plane anisotropy with a second magnetic easy axis that is perpendicular to the first magnetic easy axis of the first magnetic material film, and a non-magnetic spacer between the first magnetic material film and the second magnetic material film. The first magnetic material film has a magnetization oriented in a first magnetization orientation parallel to the first magnetic easy axis in the presence of no applied magnetic field, and the second magnetic material film has a magnetization oriented in a second magnetization orientation parallel to the second magnetic easy axis in the presence of no applied magnetic field.
申请公布号 US8773821(B2) 申请公布日期 2014.07.08
申请号 US201213646187 申请日期 2012.10.05
申请人 NVE Corporation 发明人 Davies Joseph E.
分类号 G11B5/39 主分类号 G11B5/39
代理机构 Kinney & Lange, P.A. 代理人 Kinney & Lange, P.A.
主权项 1. A mixed anisotropy magnetic field sensor comprising: a first magnetic material film having in-plane anisotropy with a first magnetic easy axis that is in-plane, the first magnetic material film having a magnetization that has a first magnetization orientation parallel to the first magnetic easy axis in the presence of no applied magnetic field; a second magnetic material film having out-of-plane anisotropy with a second magnetic easy axis that is perpendicular to the first magnetic easy axis of the first magnetic material film, the second magnetic material film having a magnetization that has a second magnetization orientation parallel to the second magnetic easy axis in the presence of no applied magnetic field; and a non-magnetic spacer between the first magnetic material film and the second magnetic material film; wherein the magnetization of the first magnetic material film rotates to align with the magnetization of the second magnetic material film in the second magnetization orientation in the presence of an applied out-of-plane magnetic field exceeding a threshold, and the magnetization of the second magnetic material film rotates to align with the magnetization of the first magnetic material film in the first magnetization orientation in the presence of an applied in-plane magnetic field exceeding a threshold; and wherein at least one of the first magnetic material film and the second magnetic material film has increased magnetization in a region adjacent to the non-magnetic spacer.
地址 Eden Prairie MN US