| 发明名称 |
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES |
| 摘要 |
<p>Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other.</p> |
| 申请公布号 |
KR20140085604(A) |
申请公布日期 |
2014.07.07 |
| 申请号 |
KR20147016438 |
申请日期 |
2011.11.23 |
| 申请人 |
INTEL CORP. |
发明人 |
KUHN KELIN J.;KIM, SEI YON;RIOS RAFAEL;CEA STEPHEN M.;GILES MARTIN D.;CAPPELLANI ANNALISA;RAKSHIT TITASH;CHANG PETER;RACHMADY WILLY |
| 分类号 |
H01L21/336;H01L21/20;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
