| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material giving such a photoresist film that reduces an outgas from a resist film in EUV exposure, and reduces an edge roughness (LWR) after development, and suppresses the occurrence of blob defects on the resist film after development by hydrophilizing the surface of the resist film.SOLUTION: There is provided a resist material comprising: a polymeric compound, as a base resin, whose alkali solubility is improved by an acid; and a polymeric compound including a repeating unit p represented by general formula (1) as a polymeric additive. In the formula, Rrepresents a linear or branched alkylene group having 1 to 4 carbon atoms; and p satisfies 0<p≤1.0. |
