| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the amount of impurities contained in a residual raw melt material.SOLUTION: A raising method of a sapphire single crystal has an end edge part forming step for forming in a raw melt material 14, a sapphire end edge part 8 linking to a sapphire single crystal body straight barrel part 6 and having a higher concentration of impurities than those of the raw melt material 14 and the sapphire single crystal body straight barrel part 6, by reducing pulling-up speed of a sapphire seed crystal and by lowering the temperature of the sapphire single crystal body straight barrel part 6, after a step for forming the sapphire single crystal body straight barrel part 6 having the same diameter up to the raw melt material 14 and linking to a sapphire single crystal body shoulder part.</p> |
