ECCENTRICITY EVALUATION METHOD AND MANUFACTURING METHOD OF EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method capable of easily evaluating eccentricity of a position to mount a wafer in a high-temperature state during epitaxial growth.SOLUTION: A wafer is placed in a pocket part of a susceptor and an epitaxial layer is grown on the wafer (S2). Film thickness distribution in a circumferential direction in an outer circumferential part of the grown epitaxial layer is measured (S3). Filtering processing is performed on the measured film thickness distribution to remove from the film thickness distribution a short-period component caused by facet growth (S4). An angle D of the outer circumferential part to be a minimum value of the film thickness distribution (long-period component), from which the short-period component has been removed, is determined as an eccentric direction of the wafer (S5). A deviation &Dgr;D from a film thickness average value for a film thickness value at the angle D is determined (S6). On the basis of a relation between the deviation &Dgr;D determined in S1 and an eccentric amount of the wafer, the deviation &Dgr;D determined in S6 is converted into the eccentric amount (S7). On the basis of the determined eccentric amount and eccentric direction, the position to place the wafer is corrected.