发明名称 COMPLEX VACUUM EVAPORATION METHOD
摘要 The present invention relates to a complex vacuum deposition method for selectively performing one method among an electron beam vacuum deposition method and a sputtering method by selectively replacing and installing an electron beam vacuum deposition device and a sputtering vacuum deposition device in one vacuum chamber. The management is easy and costs for production and maintenance are remarkably reduced as one method among the electron beam vacuum deposition method and the sputtering method can be selectively performed by selectively replacing and installing the electron beam vacuum deposition device and the sputtering vacuum deposition device in one vacuum chamber.
申请公布号 KR20140083260(A) 申请公布日期 2014.07.04
申请号 KR20120152798 申请日期 2012.12.26
申请人 YU, HEUNG SANG 发明人 YU, HEUNG SANG
分类号 C23C14/22;C23C14/30;C23C14/34 主分类号 C23C14/22
代理机构 代理人
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