发明名称 |
METHOD FOR FABRICATING ARRAY SUBSTRATE |
摘要 |
Disclosed is a method for fabricating an array substrate, comprising: forming a pattern layer comprising a gate and a gate connection on a substrate; sequentially forming an insulation layer film and an active layer film on the substrate, and forming a pattern of a gate insulation layer having a first via hole and a pattern of an active layer through a single patterning process, wherein the first via hole is located above the gate connection; sequentially forming a transparent conductive film and a metal film on the substrate, and forming a pattern layer comprising a first electrode and a pattern layer comprising a data line, a source, a drain and a TFT channel through a single patterning process. |
申请公布号 |
US2014187001(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
US201314103625 |
申请日期 |
2013.12.11 |
申请人 |
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
GUO JIAN |
分类号 |
H01L29/66;H01L21/28;H01L27/12 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating an array substrate, comprising:
forming a pattern layer comprising a gate and a gate connection on a substrate; sequentially forming an insulation layer film and an active layer film on the substrate, and forming a pattern of a gate insulation layer having a first via hole and a pattern of an active layer through a single patterning process, wherein the first via hole is located above the gate connection; sequentially forming a transparent conductive film and a metal film on the substrate, and forming a pattern layer comprising a first electrode and a pattern layer comprising a data line, a source, a drain and a TFT channel through a single patterning process. |
地址 |
Beijing CN |