发明名称 METHOD FOR FABRICATING ARRAY SUBSTRATE
摘要 Disclosed is a method for fabricating an array substrate, comprising: forming a pattern layer comprising a gate and a gate connection on a substrate; sequentially forming an insulation layer film and an active layer film on the substrate, and forming a pattern of a gate insulation layer having a first via hole and a pattern of an active layer through a single patterning process, wherein the first via hole is located above the gate connection; sequentially forming a transparent conductive film and a metal film on the substrate, and forming a pattern layer comprising a first electrode and a pattern layer comprising a data line, a source, a drain and a TFT channel through a single patterning process.
申请公布号 US2014187001(A1) 申请公布日期 2014.07.03
申请号 US201314103625 申请日期 2013.12.11
申请人 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 GUO JIAN
分类号 H01L29/66;H01L21/28;H01L27/12 主分类号 H01L29/66
代理机构 代理人
主权项 1. A method for fabricating an array substrate, comprising: forming a pattern layer comprising a gate and a gate connection on a substrate; sequentially forming an insulation layer film and an active layer film on the substrate, and forming a pattern of a gate insulation layer having a first via hole and a pattern of an active layer through a single patterning process, wherein the first via hole is located above the gate connection; sequentially forming a transparent conductive film and a metal film on the substrate, and forming a pattern layer comprising a first electrode and a pattern layer comprising a data line, a source, a drain and a TFT channel through a single patterning process.
地址 Beijing CN