| 发明名称 |
MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE |
| 摘要 |
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure. |
| 申请公布号 |
US2014183579(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201313732532 |
申请日期 |
2013.01.02 |
| 申请人 |
Kaeding John F.;Lee Dong-Seon;Iza Michael;Baker Troy J.;Sato Hitoshi;Haskell Benjamin A.;Speck James S.;DenBaars Steven P.;Nakamura Shuji |
发明人 |
Kaeding John F.;Lee Dong-Seon;Iza Michael;Baker Troy J.;Sato Hitoshi;Haskell Benjamin A.;Speck James S.;DenBaars Steven P.;Nakamura Shuji |
| 分类号 |
H01L33/18;H01L33/00 |
主分类号 |
H01L33/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising a semi-polar III-nitride film having a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction. |
| 地址 |
Mountain View CA US |
