HEAT DISSIPATING COMPONENT FOR SEMICONDUCTOR ELEMENT

摘要

Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 μm in film thickness, (2) an Ni layer 1-5 μm in film thickness, and (3) an Au layer 0.05-4 μm in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.

主权项

1. A heat dissipating component for a semiconductor element, comprising
an aluminum-diamond composite formed by covering both main faces of a plate-shaped body of thickness 0.4 to 6 mm comprising 40 vol % to 70 vol % diamond particles, the balance consisting of a metal having aluminum as a main component, with a covering layer consisting of a metal having aluminum as a main component or an aluminum-ceramic composite material; wherein (1) an amorphous Ni alloy layer of film thickness 0.1 to 1 μm, (2) a Ni layer of film thickness 1 to 5 μm, and (3) an Au layer of film thickness 0.05 to 4 μm are formed, sequentially from a main face side, on both main faces of the aluminum-diamond composite, such that a ratio between the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) is 0.3 or less.