发明名称 OPTICAL SEMICONDUCTOR DEVICE
摘要 An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.
申请公布号 US2014185641(A1) 申请公布日期 2014.07.03
申请号 US201314132170 申请日期 2013.12.18
申请人 Kabushiki Kaisha Toshiba 发明人 YOSHIDA Haruhiko;OHIRA Kazuya;EZAKI Mizunori
分类号 H01S5/026 主分类号 H01S5/026
代理机构 代理人
主权项 1. An optical semiconductor device comprising: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer, the active layer having a ring- or disk-like shape; a second semiconductor layer of a second conductivity type provided on the active layer, the second semiconductor layer having a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer, wherein the first semiconductor layer includes a first region having a ring- or disk-like shape and a second region provided around an outer circumference of the first region, the second region having a smaller thickness than the first region, the first electrode is provided on the second region, and a groove or a plurality of holes are provided in a portion of the second region, the portion being located between the first region and the first electrode.
地址 Minato-ku JP