| 发明名称 |
Photoelectric conversion device and method of producing the same |
| 摘要 |
<p>A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm-3.
</p> |
| 申请公布号 |
EP1953832(A3) |
申请公布日期 |
2014.07.02 |
| 申请号 |
EP20080001549 |
申请日期 |
2008.01.28 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NASANU, YOSHIYUKI;ISHIKAWA, YASUAKI;NAKANO, TAKANORI |
| 分类号 |
H01L31/075;H01L31/18 |
主分类号 |
H01L31/075 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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