| 摘要 |
<p>Provided is a power module (100) including a metal base (1), an insulating substrate (2) which is attached to the metal base (1), a semiconductor chip and a control terminal (6) which are attached to a circuit pattern of the insulating substrate (2), and a resin case (7) which is attached to the metal base (1). The control terminal (6) includes a penetration portion (6a) which penetrates a cover (9) of the resin case (7), an L-shaped processed portion (6b) which is connected to the penetration portion (6a), and a connection portion (6c) which is connected to the L-shaped processed portion (6b). A protrusion portion (10) is installed in a portion of the control terminal (6), which penetrates the cover (9). The protrusion portion (10) is in contact with a protrusion receiving portion (9b) which is configured with a front surface of the cover (9). The L-shaped processed portion (6b) is in contact with a convex portion (9c) which is installed in a rear surface of the cover (9). Accordingly, at the time of detaching a connector from the control terminal (6), a stress is prevented from being transferred to the insulating substrate (2), so that it is possible to provide a semiconductor device having high dielectric strength and high reliability.</p> |
