Light-emitting diode with a mirror protection layer

摘要

A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.

主权项

1. A light-emitting diode (LED) with a mirror protection layer, comprising:
an N-type electrode; an N-type semiconductor layer, the N-type electrode being formed at one side of the N-type semiconductor layer; a light-emitting layer formed at one side of the N-type semiconductor layer away from the N-type electrode; a P-type semiconductor layer formed at one side of the light-emitting layer away from the N-type semiconductor layer; a metal mirror layer formed at one side of the P-type semiconductor layer away from the light-emitting layer; a protective adhesion layer which is formed at one side of the metal mirror layer away from the P-type semiconductor layer and includes a hollow frame which masks edges of the metal mirror layer and extends inwards by 10 to 50 μm; a protection layer formed at one side of the protective adhesion layer away from the P-type semiconductor layer and made of metal oxide, the protection layer including the hollow frame same as the protective adhesion layer; a buffer layer which is formed at one side of the protection layer away from the metal mirror layer and passes through the frame to contact with the metal mirror layer; a binding layer formed at one side of the buffer layer away from the protection layer; a permanent substrate formed at one side of the binding layer away from the protection layer; and a P-type electrode formed at one side of the permanent substrate away from the binding layer.