Apparatus and method for dielectric deposition

摘要

The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.

主权项

1. A method for chemical vapor deposition of coatings of materials on a substrate at a temperature less than 150° C. within an evacuated chamber containing two or more elongated electrodes comprising:
moving a substrate perpendicular to a long dimension of one electrode of said two or more electrodes, and between said electrode and a support structure in the evacuated chamber and wherein: a minimum gap between a front side of one electrode of said two or more electrodes and the substrate is also less than a width of said one electrode, and said gap is between 10 mm and 40 mm, and said one electrode of said two or more electrodes has one or more grooves running the long dimension of said one electrode and divides said one electrode into two or more main sections where each of said one or more grooves is between 5 millimeters and 4 centimeters wide, and said one electrode of said two or more electrodes is connected to one or more AC power sources; and powering said one electrode with said one or more AC power sources to generate an AC powered electrode; injecting a first reactant gas into a groove of said one or more grooves in said AC powered electrode into a first region within the groove of said one or more grooves furthest from the substrate, so the first reactant gas flows toward the substrate; injecting a second gas including a gas-phase precursor compound containing at least one of: silicon, metal, and carbon into a second region within the groove, downstream of the flow from said first region so that the second gas mixes with the first reactant gas to form a mixed gas with a gas pressure, and exits the groove, and after flowing between said electrode and the substrate, the mixed gas flows away from the substrate past a side defining the long dimension of said AC powered electrode and is exhausted.