发明名称 Non-volatile memory with dynamic multi-mode operation
摘要 A method and system for extending the life span of a flash memory device. The flash memory device is dynamically configurable to store data in the single bit per cell (SBC) storage mode or the multiple bit per cell (MBC) mode. In the MBC storage mode, the cell can have one of multiple possible states, where each state is defined by respective threshold voltage ranges. In the SBC mode, the cell can have states with threshold voltages corresponding to states of the MBC storage mode which are non-adjacent to each other to improve reliability characteristics of the cell.
申请公布号 US8767461(B2) 申请公布日期 2014.07.01
申请号 US201314022805 申请日期 2013.09.10
申请人 Conversant Intellectual Property Management Inc. 发明人 Kim Jin-Ki
分类号 G11C16/04 主分类号 G11C16/04
代理机构 Borden Ladner Gervais LLP 代理人 Hung Shin;Borden Ladner Gervais LLP
主权项 1. An apparatus comprising: a flash memory array; an input to receive a request that includes a logical address; a translator configured to map the logical address to a corresponding physical address within the flash memory array; and circuitry configured to issue i) a first type of program command when the physical address is within a first subdivision of the flash memory array; and ii) a second different type of program command when the physical address is within a second subdivision of the flash memory array, the first subdivision being different than the second subdivision.
地址 Ottawa, Ontario CA
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